Samsung has announced that it is now mass producing its 3-bit-per cell, 64Gbit NAND flash chip, which can be used to create smartphones, SD memory cards and solid state drives.
According to Samsung, the new NAND flash chip, that uses circuits that are 14 per cent smaller than those found on previous models, offers better performance by using Toggle DDR (Double Data Rate) 1.0 specifications.
In an e-mailed statement, the company said that the new chips will be used in USB drives and memory cards. The 20nm or nano meter class circuitry used by Samsung for the new chips is the densest circuitry ever used.
"By now entering into full production of 20nm-class, 64Gbit, 3-bit devices, we expect to accelerate adoption of our high-performance NAND solutions that use Toggle DDR technology, for applications that also require high-density NAND," said Seijin Kim, vice president of Flash Memory Planning/Enabling at Samsung Electronics in a statement this week.
For perspective, a 25nm NAND flash circuitry is designed to be 3000 times thinner than a strand of human hair.
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